Thursday 22 August 2013

Researchers get around bad gap problem with graphene by using negative differential resistance

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(Phys.org) —A team of researchers at the University of California has come up with a way to use graphene in a transistor without sacrificing speed. In a paper they've uploaded to the preprint server arXiv, the team describes how they took advantage of a property of graphene known as negative differential resistance to coax transistor-like properties out of graphene without causing it to behave as a semiconductor.



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