Thursday 30 April 2015

Researchers devise a way to grow 3 atom thick semiconducting films with wafer scale homogeneity

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(Phys.org)—A team of researchers at Cornell University has developed a technique that allows for growing 3 atom thick semiconducting films on wafers, up to 10 centimeters across. In their paper published in the journal Nature, the team describes their technique and the ways it might be used to create ultra-tiny circuits. Tobin Marks and Mark Hersam of Northwestern University offer a News & Views perspective piece on the work done by the team in the same journal issue.

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