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Scientists have announced a method for the mass production of boron/nitrogen co-doped graphene nanoplatelets, which led to the fabrication of a graphene-based field-effect transistor (FET) with semiconducting nature. This opens up opportunities for practical use in electronic devices.
via Science Daily
Scientists have announced a method for the mass production of boron/nitrogen co-doped graphene nanoplatelets, which led to the fabrication of a graphene-based field-effect transistor (FET) with semiconducting nature. This opens up opportunities for practical use in electronic devices.
via Science Daily
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