2D transistors promise a faster electronics future

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Berkeley Lab researchers fabricated the first fully 2D field-effect transistor from layers of molybdenum disulfide, hexagonal boron nitride and graphene held together by van der Waals bonding.   Faster electronic device architectures are in the offing with the unveiling of the world’s first fully two-dimensional field-effect transistor (FET) by researchers with the Lawrence Berkeley National Laboratory (Berkeley Lab). Unlike conventional FETs made from silicon, these 2D FETs suffer no performance drop-off under high voltages and provide high electron mobility, even when scaled to a monolayer in thickness. Ali Javey, a faculty scientist in Berkeley Lab’s Materials Sciences Division and a UC Berkeley professor of electrical engineering and computer science, led this research in which 2D heterostructures were fabricated from layers of a transition metal dichalcogenide, hexagonal boron nitride and graphene stacked via van der Waals interactions. “Our work represents an important stepping stone towards the realization of a new class of electronic devices in which interfaces based on van der Waals interactions rather than covalent bonding provide an unprecedented degree of control in material engineering and device exploration,” Javey says. “The results demonstrate the promise of using an all-layered material system for future electronic applications.” Javey is the corresponding author

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