This graphic depicts the structure of an extremely thin semiconductor called molybdenum disulfide, which is particularly promising for future flexible and transparent electronic devices for displays, touch pads and other applications. The structure of molybdenum disulfide is a single-atomic layer of molybdenum sandwiched between single-atomic layers of sulfide and “doped” with a chemical compound called 1,2 dichloroethane (DCE). (Purdue University photo/Lingming Yang) Download Photo Researchers are reporting key milestones in developing new semiconductors to potentially replace silicon in future computer chips and for applications in flexible electronics. Findings are detailed in three technical papers, including one focusing on a collaboration of researchers from Purdue University, Intel Corp. and SEMATECH, a consortium dedicated to advancing chip manufacturing. The team has demonstrated the potential promise of an extremely thin – or “two-dimensional” – semiconductor called molybdenum disulfide. Although molybdenum disulfide has been studied by research groups around the world, a key obstacle to its practical use has been a large electrical resistance between metal contacts and single-atomic layers of the material. This “contact resistance” limits the flow of current between the contacts and the molybdenum disulfide, hindering performance. “This is a fundamental bottleneck,” said Peide “Peter” Ye, a Purdue professor of electrical and
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