Rice University’s breakthrough silicon oxide technology for high-density, next-generation computer memory is one step closer to mass production, thanks to a refinement that will allow manufacturers to fabricate devices at room temperature with conventional production methods. This scanning electron microscope image and schematic show the design and composition of new RRAM memory devices based on porous silicon oxide that were created at Rice University. Credit: Tour Group/Rice University First discovered five years ago, Rice’s silicon oxide memories are a type of two-terminal, “resistive random-access memory” (RRAM) technology. In a new paper available online in the American Chemical Society journal Nano Letters, a Rice team led by chemist James Tour compared its RRAM technology to more than a dozen competing versions. “This memory is superior to all other two-terminal unipolar resistive memories by almost every metric,” Tour said. “And because our devices use silicon oxide — the most studied material on Earth — the underlying physics are both well-understood and easy to implement in existing fabrication facilities.” Tour is Rice’s T.T. and W.F. Chao Chair in Chemistry and professor of mechanical engineering and nanoengineering and of computer science. Tour and colleagues began work on their breakthrough RRAM technology more than five years ago. The basic concept behind
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