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Researchers have fabricated High photosensitivity back-gated field-effect phototransistors made of only 20 nanometer thick molybdenum diselenide crystals by facile mechanical cleavage and transfer of MoSe2 flakes onto a silicon wafers for next generation for photodetector applications.
via Science Daily
Researchers have fabricated High photosensitivity back-gated field-effect phototransistors made of only 20 nanometer thick molybdenum diselenide crystals by facile mechanical cleavage and transfer of MoSe2 flakes onto a silicon wafers for next generation for photodetector applications.
via Science Daily
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