Resistive memory cells or ReRAMs for short are deemed to be the new super information-storage solution of the future. At present, two basic concepts are being pursued, which, up to now, were associated with different types of active ions. But this is not quite correct, as researchers were surprised to discover. In valence change memory (VCM) cells, not only are negatively charged oxygen ions active, but so too are positively charged metal ions. The effect enables switching characteristics to be modified as required and makes it possible to move back and forth from one concept to the other.
via Science Daily
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